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  top view 8 12 3 4 5 6 7 d d d g s a d s s features  advanced process technology  low on-resistance  logic level gate drive  p-channel mosfet  dynamic dv/dt rating  150c operating temperature  fast switching  fully avalanche rated  lead-free, rohs compliant  automotive qualified* descriptionspecifically designed for automotive applications, this cel- lular design of hexfet? power mosfets utilizes the lat- est processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automo- tive and a wide variety of other applications. absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the speci fica- tions is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. thethermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v (br)dss -30v r ds(on) max. 0.02 i d -10a parameter max. units i d @ t a = 25c continuous drain current, v gs @ -10v -10 i d @ t a = 70c continuous drain current, v gs @ -10v -7.1 i dm pulsed drain current -45 p d @t a = 25c power dissipation 2.5 linear derating factor 0.02 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy  370 mj dv/dt peak diode recovery dv/dt  -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter max. units r ja junction-to-ambient  50 c/w w a c -55 to + 150 
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 !"  form quantity tube 95 AUIRF7416Q tape and reel 2500 AUIRF7416Qtr base part number package type standard pack orderable part number AUIRF7416Q so-8 so-8 AUIRF7416Q downloaded from: http:///
     
   
    
   
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' 0 static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -30 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC -0.024 CCC v/c CCC CCC 0.020 CCC CCC 0.035 v gs(th) gate threshold voltage -1.0 CCC -2.04 v gfs forward transconductance 5.6 CCC CCC s i dss drain-to-source leakage current CCC CCC -1.0 CCC CCC -25 i gss gate-to-source forward leakage CCC CCC -100 gate-to-source reverse leakage CCC CCC 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 61 92 q gs gate-to-source charge CCC 8.0 12 q gd gate-to-drain ("miller") charge CCC 22 32 t d(on) turn-on delay time CCC 18 CCC t r rise time CCC 49 CCC t d(off) turn-off delay time CCC 59 CCC t f fall time CCC 60 CCC c iss input capacitance CCC 1700 CCC c oss output capacitance CCC 890 CCC c rss reverse transfer capacitance CCC 410 CCC diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode)  v sd diode forward voltage CCC CCC -1.0 v t rr reverse recovery time CCC 56 85 ns t j = 25c,i f = -5.6a q rr reverse recovery charge CCC 99 150 nc di/dt = 100a/ s  -45 CCC CCC CCC CCC mosfet symbol showing the v ds = -24v -3.1 na a a pf ns nc i d = -5.6a r g = 6.2 t j = 25c, i s = -5.6a, v gs = 0v  integral reverse p-n junction diode. conditions r d = 2.7 , see fig. 10  v gs = 0v v ds = -25v ? = 1.0mhz, see fig. 5 v ds = -24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c v gs = -10v, see fig. 6 & 9  conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -5.6a  v gs = 20v v dd = -15v r ds(on) static drain-to-source on-resistance v gs = -4.5v, i d = -2.8a  conditions v ds = -10v, i d = -2.8a i d = -5.6a v gs = -20v v ds = v gs , i d = -250 a downloaded from: http:///
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       1 10 100 0.1 1 10 d ds 20 s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 1 10 100 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5.5v - 4.5v - 4.0v - 3.5v bottom - 3.0v 20 s pulse width t = 150c j 1 10 100 3.0 3.5 4.0 4.5 5.0 5.5 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -10v 20 s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -5.6a d downloaded from: http:///
     
   
    
   
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         !         !   "#     !$    % !  %  ! 0 1000 2000 3000 4000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 2 04 06 08 01 0 0 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -24v v = -15v dsds for test circuit see figure 9 i = -5.6a d 1 10 100 0.4 0.6 0.8 1.0 1.2 t = 25c t = 150c j j v = 0v gs sd sd a -v , source-to-drain voltage (v) -i , reverse drain current (a) 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms downloaded from: http:///
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0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)  "# &  '   (  )*  $+     !         !  ,'   - % ! ,'  + - 2   1    0.1 %   2  2    78! +02 d.u.t. v ds i d i g -3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - ./ q g q gs q gd v g charge v ds 90% 10% v gs t d(on) t r t d(off) t f  % !     downloaded from: http:///
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  "# $' & !      0 (  ' ,'    0 (  '     t p v ( br ) dss i as r g i as 0.01 t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom -2.5a -4.5a -5.6a downloaded from: http:///
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 
  

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so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] note: for the most current drawing please refer to ir website at http://www.irf.com/package/ f7416q downloaded from: http:///
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
     
   
    
   
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7 8     +  (     9 +  : http//www.irf.com/ 77&#  $&8./. ;        ;     7775 !  !'!  qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 425v) ??? aec-q101-002 human body model class h1b (+/- 1000v) ??? aec-q101-001 downloaded from: http:///
     
   
    
   
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 unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military - grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has notdesignated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///
     
   
    
   
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date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated data sheet with new ir corporate template revision history 3/27/2014 downloaded from: http:///


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